Nonvolatile resistive switching memory based on amorphous carbon
نویسندگان
چکیده
Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. Nano Lett. 8, 3345 2008 . Compared to nanostructures, hydrogenated amorphous carbon a-C:H has much more controllable preparation processes. Study on a-C:H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/a-C:H /Pt structures with device yield 90%, ON/OFF ratio 100, and retention time 105 s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. © 2010 American Institute of Physics. doi:10.1063/1.3406121
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